SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?7 ordering?specifications part?no. package marking shipping SVD5N60AT to-220-3l SVD5N60AT 50unit/tube svd5n60af to-220f-3l svd5n60af 50unit/tube absolute?maximum?ratings (tc=25 c?unless?otherwise?noted) parameter symbol SVD5N60AT svd5n60af unit drain-source?voltage v ds 600 v gate-source?voltage v gs 30 v drain?current i d 5.0 a 100 33 w power?dissipation(t c =25 c) ???????????????????????????????-derate?above?25 c p d 0.8 0.26 w/ c single?pulsed?avalanche?energy??(note?1) e as 330 mj repetitive?avalanche?energy???(note?2) e ar 7.3 mj operation?junction?temperature t j -55 +150 c storage?temperature t stg -55 +150 c 5a,?600v?n-channel?mosfet general?description SVD5N60AT/f? is? an? n-channel? enhancement? mode? power mos field? effect? transistor? which? is? produced? using? silan? proprietary s-rin tm ? structure? dmos? technology.? the? improved? planar? stripe cell?and?the?improved?guarding?ring?terminal?have ?been?especially tailored?to?minimize?on-state?resistance, ?provide?superior?switching performance,? and? withstand? high? energy? pulse? in? the? avalanche and?commutation?mode. these?devices?are?widely?used?in?ac-dc?power?suppliers,?dc- dc converters?and?h-bridge?pwm?motor?drivers. features * ? 5a,600v,r ds(on) ? typ ? =2.0 w @v gs =10v * ? low?gate?charge * ? low?crss * ? fast?switching * ? improved?dv/dt?capability www.datasheet.co.kr datasheet pdf - http://www..net/
SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?2?of?7 thermal?characteristics parameter symbol SVD5N60AT svd5n60af unit thermal?resistance,?junction-to-case r jc 1.25 3.79 c/w thermal?resistance,?junction-to-ambient r ja 62.5 62.5 c/w electrical?characteristics ?(t c =25 c?unless?otherwise?noted) parameter symbol test?conditions min. typ. max. unit drain?-source?breakdown?voltage b vdss ?v gs =0v,?i d =250a 600 -- -- v drain-source?leakage?current i dss v ds =600v,?v gs =0v -- -- 10 a gate-source?leakage?current i gss v gs =30v,?v ds =0v -- -- 100 na gate?threshold?voltage v gs(th) v gs =?v ds ,?i d =250a 2.0 -- 4.0 v static?drain-?source?on?state resistance r ds(on) v gs =10v,?i d =2a -- 2.0 2.4 w input?capacitance c iss -- 672 -- output?capacitance c oss -- 66 -- reverse?transfer?capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 4.7 -- pf turn-on?delay?time t d(on) -- 27 -- turn-on?rise?time t r -- 19 -- turn-off?delay?time t d(off) -- 160 -- turn-off?fall?time t f v dd =300v,i d =4.4a, r g =25 w ???????????????????????(note?3,4) -- 22 -- ns total?gate?charge q g -- 19.8 -- gate-source?charge q gs -- 4 -- gate-drain?charge q gd v ds =480v,i d =4.4a, v gs =10v ???????????????????????(note?3,4) -- 7.2 -- nc source-drain?diode?ratings?and?characteristics parameter symbol test?conditions min. typ. max. unit continuous?source?current i s -- -- 5.0 pulsed?source?current i sm integral?reverse?p-n junction?diode?in?the mosfet -- -- 16 a diode?forward?voltage v sd i s =5.0a,v gs =0v -- -- 1.4 v reverse?recovery?time t rr -- 300 -- ns reverse?recovery?charge q rr i s =5.0a,v gs =0v, di f /dt=100a/s???(note?3) -- 2.2 -- c notes: 1.? l=30mh,i as =4.4a,v dd =85v,r g =25 w ,starting?t j =25 c; 2.? repetitive?rating:?pulse?width?limited?by?maximum?junction?temperature; 3.? pulse?test:?pulse?width? ? 300 s,duty?cycle ? 2%; 4.? essentially?independent?of?operating?temperature. www.datasheet.co.kr datasheet pdf - http://www..net/
SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?3?of?7 nomenclature typical?characteristics v gs ?gate - source?voltage [v] i d ?drain?current [a] v sd ?source - drain?voltage [v] figure 1 .?on - region?characteristics ?figure 2 .?transfer?characteristics figure 4 .?body?diode?forward?voltage?variation?vs. source?current?and?temperature figure 3 .?on - resitance?variation?vs . ?drain?current?and?gate?voltage v ds ?drain - source?voltage [v] 10 .0 var iable vgs=6 . 0v vgs=6 . 5v vgs=7 . 0v vgs=7 . 5v vgs=8 . 0v vgs=10v vgs=15v vgs=4 . 0v vgs=4 . 5v vgs=5 . 0v vgs=5 . 5v ? notes: 1 . 250 ? s pu l se tes t 2 . tc = 25 1.0 0.1 0.1 1.0 10 .0 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10 t=- 55 t= 25 t= 150 notes : 1 .?vds?=?50 v 2 .?250?s?pulse?test 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -2 0 2 4 6 8 10 vgs=?10 .0v vgs=?20 .0v note?:?tj?=?25 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 t= 25 t= 150 notes : 1 .?vgs?= 0v 2 .?250?s?pulse?test www.datasheet.co.kr datasheet pdf - http://www..net/
SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?4?of?7 typical?characteristics?(continued) www.datasheet.co.kr datasheet pdf - http://www..net/
SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?5?of?7 typical?test?circuit 200nf 12 v 50 .? 300nf v gs 3 ma v ds v gs 10 v charge qg qg s qg d v ds v gs r g r l v dd 10 v v ds v gs 10 % 90 % td ( on ) t on tr td ( off ) t off t f v ds r g v dd 10 v l tp i d bv dss i as v dd tp time v ds (t) i d(t) eas = 1 - 2 li as 2 bv dss bv dss v dd same?type as?dut gate?charge?test?circuit?&?waveform resistive?switching?test?circuit?&?waveform unclamped?inductive?switching?test?circuit?&?waveform dut dut dut www.datasheet.co.kr datasheet pdf - http://www..net/
SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?6?of?7 package?outline to-220-3l(one) unit:?mm to-220-3l ? two ? unit:?mm 6 . 1 0 ~ 6 . 8 0 1 3 . 1 0 . 5 1 5 . 1 ~ 1 5 . 9 3 . 9 5 m a x www.datasheet.co.kr datasheet pdf - http://www..net/
SVD5N60AT/svd5n60af hangzhou?silan?microelectronics?co.,ltd rev:1.0????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?7?of?7 package?outline?(continued) to-220f-3l(one) unit:?mm a l 1 2 . 6 ~ 1 3 . 8 1 2 . 4 0 . 4 6 . 7 0 0 . 2 0 to-220f-3l(two) unit:?mm www.datasheet.co.kr datasheet pdf - http://www..net/
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